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IPB34CN10NGATMA1

IPB34CN10NGATMA1

MOSFET N-CH 100V 27A D2PAK

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IPB34CN10NGATMA1

IPB34CN10NGATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPB34CN10NGATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 27A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
271727 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IPB34CN10NGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:27A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:34mOhm @ 27A, 10V
Vgs(th) (Max) @ Id:4V @ 29µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1570 pF @ 50 V
FET Feature:-
Power Dissipation (Max):58W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB34CN10NGATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB34CN10NGATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB34CN10NGATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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