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SI6473DQ-T1-GE3

SI6473DQ-T1-GE3

MOSFET P-CH 20V 6.2A 8TSSOP

SI6473DQ-T1-GE3

SI6473DQ-T1-GE3

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Part No :

SI6473DQ-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 20V 6.2A 8TSSOP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
701670 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
SI6473DQ-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:12.5mOhm @ 9.5A, 4.5V
Vgs(th) (Max) @ Id:450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):1.08W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TSSOP
Package / Case:8-TSSOP (0.173", 4.40mm Width)
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