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SIT1602BI-32-25N-10.000000X

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EPC2016

EPC2016

GANFET N-CH 100V 11A DIE

654C148A4I3T

654C148A4I3T

XTAL OSC XO 148.3516MHZ HCMOS

EPC2016

EPC2016

Image is for reference, please contact us to get the real picture

Part No :

EPC2016

Manufacturer
EPC
Description
GANFET N-CH 100V 11A DIE
Catalog
Transistors - FETs, MOSFETs - Single
Availability
371637 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2025
PDF
EPC2016 PDF
Type Description
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Discontinued at Digi-Key
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:16mOhm @ 11A, 5V
Vgs(th) (Max) @ Id:2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:5.2 nC @ 5 V
Vgs (Max):+6V, -5V
Input Capacitance (Ciss) (Max) @ Vds:520 pF @ 50 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-40°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Die
Package / Case:Die
EPC2016 is available at GangBo-ic.com, Please review product page below for detailed information, including EPC2016 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for EPC2016 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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