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BUZ32H3045AATMA1

BUZ32H3045AATMA1

MOSFET N-CH 200V 9.5A TO263-3

BUZ32H3045AATMA1

BUZ32H3045AATMA1

Image is for reference, please contact us to get the real picture

Part No :

BUZ32H3045AATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 200V 9.5A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
231623 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
BUZ32H3045AATMA1 PDF
Type Description
Series:SIPMOS®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:400mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:530 pF @ 25 V
FET Feature:-
Power Dissipation (Max):75W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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