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SIE830DF-T1-GE3

SIE830DF-T1-GE3

MOSFET N-CH 30V 50A 10POLARPAK

SLB008724-0C

SLB008724-0C

24 X 7 TECHNICAL SUPPORT: 3RD YE

SIE830DF-T1-GE3

SIE830DF-T1-GE3

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Part No :

SIE830DF-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 30V 50A 10POLARPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
691569 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
SIE830DF-T1-GE3 PDF
Type Description
Series:WFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:115 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:5500 pF @ 15 V
FET Feature:-
Power Dissipation (Max):5.2W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:10-PolarPAK® (S)
Package / Case:10-PolarPAK® (S)
SIE830DF-T1-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SIE830DF-T1-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SIE830DF-T1-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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