MOSFET N-CH 100V 47A TO262-3
Type | Description |
---|---|
Series: | SIPMOS® |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 47A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 26mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs: | 135 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2500 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 175W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO262-3-1 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRL1004IR (Infineon Technologies) |
MOSFET N-CH 40V 130A TO220AB |
|
IRFR13N20DTRRIR (Infineon Technologies) |
MOSFET N-CH 200V 13A DPAK |
|
BVSS138LT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 200MA SOT-23-3 |
|
BSF077N06NT3GXUMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 13A/56A 2WDSON |
|
SI7886ADP-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 15A PPAK SO-8 |
|
IXFC24N50Wickmann / Littelfuse |
MOSFET N-CH 500V 21A ISOPLUS220 |
|
IRFS17N20DIR (Infineon Technologies) |
MOSFET N-CH 200V 16A D2PAK |
|
NP88N03KDG-E1-AYRenesas Electronics America |
MOSFET N-CH 30V 88A TO263 |
|
IRFSL41N15DIR (Infineon Technologies) |
MOSFET N-CH 150V 41A TO262 |
|
FDB8132Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 80A D2PAK |
|
STD11NM60N-1STMicroelectronics |
MOSFET N-CH 600V 10A I-PAK |
|
FDS7066N7Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 23A 8SO |
|
IXFX55N50FWickmann / Littelfuse |
MOSFET N-CH 500V 55A PLUS247-3 |