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2N6661JTVP02

2N6661JTVP02

MOSFET N-CH 90V 860MA TO39

2N6661JTVP02

2N6661JTVP02

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Part No :

2N6661JTVP02

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 90V 860MA TO39
Catalog
Transistors - FETs, MOSFETs - Single
Availability
491349 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
2N6661JTVP02 PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):90 V
Current - Continuous Drain (Id) @ 25°C:860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:-
Power Dissipation (Max):725mW (Ta), 6.25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-39
Package / Case:TO-205AD, TO-39-3 Metal Can
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