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IRF1018ESPBF

IRF1018ESPBF

MOSFET N-CH 60V 79A D2PAK

IRF1018ESPBF

IRF1018ESPBF

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Part No :

IRF1018ESPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 79A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
631263 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2024
PDF
IRF1018ESPBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Discontinued at Digi-Key
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:79A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.4mOhm @ 47A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:69 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2290 pF @ 50 V
FET Feature:-
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF1018ESPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF1018ESPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF1018ESPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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