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SI3441BDV-T1-GE3

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Part No :: SI3441BDV-T1-GE3

Manufacturer: Vishay / Siliconix

Description: MOSFET P-CH 20V 2.45A 6TSOP

Catalog: Transistors - FETs, MOSFETs - Single

Availability: 741174 pieces

Shipped from: HK warehouse

Expected Shipping Date: Feb 23 - Feb 27 2025

PDF: SI3441BDV-T1-GE3 PDF

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	2.45A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	90mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id:	850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	8 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	-
FET Feature:	-
Power Dissipation (Max):	860mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	6-TSOP
Package / Case:	SOT-23-6 Thin, TSOT-23-6

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