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SPB10N10

SPB10N10

MOSFET N-CH 100V 10.3A TO263-3

SPB10N10

SPB10N10

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Part No :

SPB10N10

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 10.3A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
181118 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 12 - Mar 16 2025
PDF
SPB10N10 PDF
Type Description
Series:SIPMOS®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:170mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id:4V @ 21µA
Gate Charge (Qg) (Max) @ Vgs:19.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:426 pF @ 25 V
FET Feature:-
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPB10N10 is available at GangBo-ic.com, Please review product page below for detailed information, including SPB10N10 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SPB10N10 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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