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IRFSL9N60ATRL

IRFSL9N60ATRL

MOSFET N-CH 600V 9.2A I2PAK

IRFSL9N60ATRL

IRFSL9N60ATRL

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Part No :

IRFSL9N60ATRL

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 600V 9.2A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
310931 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 07 - Mar 11 2025
PDF
IRFSL9N60ATRL PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:750mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 25 V
FET Feature:-
Power Dissipation (Max):170W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IRFSL9N60ATRL is available at GangBo-ic.com, Please review product page below for detailed information, including IRFSL9N60ATRL price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFSL9N60ATRL to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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