MOSFET N-CH 40V 120A I2PAK
Type | Description |
---|---|
Series: | STripFET™ F6 |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.7mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 130 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 7735 pF @ 20 V |
FET Feature: | - |
Power Dissipation (Max): | 190W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I2PAK (TO-262) |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
IRF3711ZSPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 92A D2PAK |
![]() |
NVMFS5C430NLWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 200A 5DFN |
![]() |
IPB80N06S205ATMA1IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO263-3 |
![]() |
RJK0305DPB-WS#J0Renesas Electronics America |
MOSFET N-CH 30V 30A 5LFPAK |
![]() |
IRF7702IR (Infineon Technologies) |
MOSFET P-CH 12V 8A 8TSSOP |
![]() |
STB12NM50NDSTMicroelectronics |
MOSFET N-CH 500V 11A D2PAK |
![]() |
BSP89L6327HTSA1IR (Infineon Technologies) |
MOSFET N-CH 240V 350MA SOT223-4 |
![]() |
PMR780SN,115NXP Semiconductors |
MOSFET N-CH 60V 550MA SC75 |
![]() |
AON6970_002Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH DFN |
![]() |
IRFIZ48VPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 39A TO220AB FP |
![]() |
IRF450IR (Infineon Technologies) |
MOSFET N-CH 500V 12A TO204AA |
![]() |
ISP13DP06NMSATMA1IR (Infineon Technologies) |
MOSFET P-CH 60V SOT223 |
![]() |
FQP90N10V2Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 90A TO220-3 |