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IRLI640G

IRLI640G

MOSFET N-CH 200V 9.9A TO220-3

IRLI640G

IRLI640G

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Part No :

IRLI640G

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 200V 9.9A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
240724 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 03 - Mar 07 2025
PDF
IRLI640G PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:9.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4V, 5V
Rds On (Max) @ Id, Vgs:180mOhm @ 5.9A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 25 V
FET Feature:-
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3 Full Pack, Isolated Tab
IRLI640G is available at GangBo-ic.com, Please review product page below for detailed information, including IRLI640G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRLI640G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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