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IRF1902TRPBF

IRF1902TRPBF

MOSFET N-CH 20V 4.2A 8SO

IRF1902TRPBF

IRF1902TRPBF

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Part No :

IRF1902TRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 20V 4.2A 8SO
Catalog
Transistors - FETs, MOSFETs - Single
Availability
670667 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 02 - Mar 06 2025
PDF
IRF1902TRPBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
Rds On (Max) @ Id, Vgs:85mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:310 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
IRF1902TRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF1902TRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF1902TRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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