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IRF6708S2TRPBF

IRF6708S2TRPBF

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Part No :

IRF6708S2TRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 13A DIRECTFET S1
Catalog
Transistors - FETs, MOSFETs - Single
Availability
390439 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 27 - Mar 03 2025
PDF
IRF6708S2TRPBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8.9mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1010 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 20W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET S1
Package / Case:DirectFET™ Isometric S1
IRF6708S2TRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF6708S2TRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF6708S2TRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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