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ERA-8AEB49R9V

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IRF5802

IRF5802

MOSFET N-CH 150V 900MA MICRO6

IRF5802

IRF5802

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Part No :

IRF5802

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 150V 900MA MICRO6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
590359 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 26 - Mar 02 2025
PDF
IRF5802 PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 540mA, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.8 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:88 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2W (Ta)
Operating Temperature:-
Mounting Type:Surface Mount
Supplier Device Package:Micro6™(TSOP-6)
Package / Case:SOT-23-6 Thin, TSOT-23-6
IRF5802 is available at GangBo-ic.com, Please review product page below for detailed information, including IRF5802 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF5802 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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