SMA-SJ/FKRAZ-SJ G316 60I
MOSFET N-CH 560V 7.6A TO220-3
Type | Description |
---|---|
Series: | CoolMOS™ |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 560 V |
Current - Continuous Drain (Id) @ 25°C: | 7.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 600mOhm @ 4.6A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 350µA |
Gate Charge (Qg) (Max) @ Vgs: | 32 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 750 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 83W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220-3-1 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRLU024ZPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 16A I-PAK |
|
FDV304P-D87ZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 25V 460MA SOT23 |
|
FQB2NA90TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 2.8A D2PAK |
|
SI7454CDP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 22A PPAK SO-8 |
|
IRLW610ATMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 3.3A I2PAK |
|
APT15F60BMicrosemi |
MOSFET N-CH 600V 16A TO247 |
|
IRFI630GVishay / Siliconix |
MOSFET N-CH 200V 5.9A TO220-3 |
|
ZXMN6A08E6TCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 2.8A SOT26 |
|
SIR408DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 50A PPAK SO-8 |
|
BUK98150-55A,135NXP Semiconductors |
MOSFET N-CH 55V 5.5A SOT-223 |
|
AO3481Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 4A SOT23-3 |
|
IRFR220NCPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 5A DPAK |
|
IXTY3N60PWickmann / Littelfuse |
MOSFET N-CH 600V 3A TO252 |