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SPP12N50C3HKSA1

SPP12N50C3HKSA1

MOSFET N-CH 560V 11.6A TO220-3

SPP12N50C3HKSA1

SPP12N50C3HKSA1

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Part No :

SPP12N50C3HKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 560V 11.6A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
020202 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
SPP12N50C3HKSA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):560 V
Current - Continuous Drain (Id) @ 25°C:11.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 25 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
SPP12N50C3HKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including SPP12N50C3HKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SPP12N50C3HKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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