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2SK1859-E

2SK1859-E

MOSFET N-CH 900V 6A TO3P

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2SK1859-E

2SK1859-E

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Part No :

2SK1859-E

Manufacturer
Renesas Electronics America
Description
MOSFET N-CH 900V 6A TO3P
Catalog
Transistors - FETs, MOSFETs - Single
Availability
280128 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 23 - Feb 27 2025
PDF
2SK1859-E PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:980 pF @ 10 V
FET Feature:-
Power Dissipation (Max):60W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
2SK1859-E is available at GangBo-ic.com, Please review product page below for detailed information, including 2SK1859-E price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for 2SK1859-E to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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