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TK4A60DB(STA4,Q,M)

TK4A60DB(STA4,Q,M)

MOSFET N-CH 600V 3.7A TO220SIS

TK4A60DB(STA4,Q,M)

TK4A60DB(STA4,Q,M)

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Part No :

TK4A60DB(STA4,Q,M)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 600V 3.7A TO220SIS
Catalog
Transistors - FETs, MOSFETs - Single
Availability
729972 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 19 - Nov 23 2024
PDF
TK4A60DB(STA4,Q,M) PDF
Type Description
Series:π-MOSVII
Package:Tube
Part Status:Last Time Buy
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id:4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:540 pF @ 25 V
FET Feature:-
Power Dissipation (Max):35W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220SIS
Package / Case:TO-220-3 Full Pack
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