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Y14880R16000B0R

Y14880R16000B0R

RES 0.16 OHM 0.1% 2W 3637

IRF9Z34NSTRR

IRF9Z34NSTRR

MOSFET P-CH 55V 19A D2PAK

IRF9Z34NSTRR

IRF9Z34NSTRR

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Part No :

IRF9Z34NSTRR

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 55V 19A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
659865 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 26 - Mar 02 2025
PDF
IRF9Z34NSTRR PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:100mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:620 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9Z34NSTRR is available at GangBo-ic.com, Please review product page below for detailed information, including IRF9Z34NSTRR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF9Z34NSTRR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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