MOSFET N-CH 55V 65.7A D2PAK
Type | Description |
---|---|
Series: | TrenchMOS™ |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 65.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 16mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2245 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 138W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AON6774Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 44A/85A 8DFN |
|
STS17NH3LLSTMicroelectronics |
MOSFET N-CH 30V 17A 8SO |
|
BSO613SPVIR (Infineon Technologies) |
MOSFET P-CH 60V 3.44A 8DSO |
|
STS9P2UH7STMicroelectronics |
MOSFET P-CH 20V 9A 8SO |
|
IRF9393PBFIR (Infineon Technologies) |
MOSFET P-CH 30V 9.2A 8SO |
|
SI4411DY-T1-E3Vishay / Siliconix |
MOSFET P-CH 30V 9A 8SO |
|
SPI20N60CFDHKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 20.7A TO262-3 |
|
IRF7421D1PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 5.8A 8SO |
|
TK4P50D(T6RSS-Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 4A DPAK |
|
IRF1302SIR (Infineon Technologies) |
MOSFET N-CH 20V 174A D2PAK |
|
RSS130N03FU6TBROHM Semiconductor |
MOSFET N-CH 30V 13A 8SOP |
|
IXFN100N25Wickmann / Littelfuse |
MOSFET N-CH 250V 100A SOT-227B |
|
FDMC7672_F125Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 16.9A/20A 8MLP |