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63MU222MZ12012

63MU222MZ12012

CAP FILM 2200PF 20% 63VDC 0805

IRF1312PBF

IRF1312PBF

MOSFET N-CH 80V 95A TO220AB

IRF1312PBF

IRF1312PBF

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Part No :

IRF1312PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 80V 95A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
079707 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 29 - Oct 03 2024
PDF
IRF1312PBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:95A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10mOhm @ 57A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:140 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5450 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 210W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
IRF1312PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF1312PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF1312PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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