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IRLD110

IRLD110

MOSFET N-CH 100V 1A 4DIP

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IRLD110

IRLD110

Image is for reference, please contact us to get the real picture

Part No :

IRLD110

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 100V 1A 4DIP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
779577 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 26 - Mar 02 2025
PDF
IRLD110 PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 5V
Rds On (Max) @ Id, Vgs:540mOhm @ 600mA, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.1 nC @ 5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:4-DIP, Hexdip, HVMDIP
Package / Case:4-DIP (0.300", 7.62mm)
IRLD110 is available at GangBo-ic.com, Please review product page below for detailed information, including IRLD110 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRLD110 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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