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FQD3N30TM

FQD3N30TM

MOSFET N-CH 300V 2.4A DPAK

FQD3N30TM

FQD3N30TM

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Part No :

FQD3N30TM

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 300V 2.4A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
719171 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 01 - Mar 05 2025
PDF
FQD3N30TM PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.2Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:230 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
FQD3N30TM is available at GangBo-ic.com, Please review product page below for detailed information, including FQD3N30TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQD3N30TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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