MOSFET N-CH 650V 11A D2PAK
Type | Description |
---|---|
Series: | MDmesh™ V |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 340mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 22 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 810 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 85W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
SSM3K7002BSU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 200MA USM |
![]() |
STD18N65M2-EPSTMicroelectronics |
MOSFET N-CH 650V 11A DPAK |
![]() |
2SJ438,MDKQ(MToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH TO220NIS |
![]() |
AUIRFL014NIR (Infineon Technologies) |
MOSFET N-CH 55V 1.5A SOT-223 |
![]() |
IRFR4105ZIR (Infineon Technologies) |
MOSFET N-CH 55V 30A DPAK |
![]() |
NTB18N06LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 15A D2PAK |
![]() |
STW160N75F3STMicroelectronics |
MOSFET N-CH 75V 120A TO247-3 |
![]() |
IXFR180N085Wickmann / Littelfuse |
MOSFET N-CH 85V 180A ISOPLUS247 |
![]() |
FQU7P20TU_AM002Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 5.7A IPAK |
![]() |
IRF7807VD2TRIR (Infineon Technologies) |
MOSFET N-CH 30V 8.3A 8SO |
![]() |
IRLR8113TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 94A DPAK |
![]() |
2SK2887TLROHM Semiconductor |
MOSFET N-CH 200V 3A CPT3 |
![]() |
STP22NS25ZSTMicroelectronics |
MOSFET N-CH 250V 22A TO220AB |