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SPI11N60CFDHKSA1

SPI11N60CFDHKSA1

MOSFET N-CH 650V 11A TO262-3

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SPI11N60CFDHKSA1

SPI11N60CFDHKSA1

Image is for reference, please contact us to get the real picture

Part No :

SPI11N60CFDHKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 11A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
579057 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 28 - Mar 04 2025
PDF
SPI11N60CFDHKSA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:440mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 25 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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