FUSE SQUARE 1.1KA 700VAC RECT
HEATSINK 54X54X12MM XCUT
MOSFET N-CH 30V 161A IPAK
DC DC CONVERTER 3.3V 1W
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 161A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.3mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 50 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4380 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 140W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | IPAK (TO-251) |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRF1324STRL-7PPRochester Electronics |
MOSFET N-CH 24V 240A D2PAK |
|
SIL08N03-TPMicro Commercial Components (MCC) |
MOSFET N-CH 30V 8A SOT23-6L |
|
CSD18542KTTTexas Instruments |
MOSFET N-CH 60V 200A DDPAK |
|
SSM3J331R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 4A SOT23F |
|
IPD90P04P405ATMA1IR (Infineon Technologies) |
MOSFET P-CH 40V 90A TO252-3 |
|
RM4N700LDRectron USA |
MOSFET N-CHANNEL 700V 4A TO252-2 |
|
IRFB7740PBFIR (Infineon Technologies) |
MOSFET N-CH 75V 87A TO220AB |
|
IRF640PBF-BE3Vishay / Siliconix |
MOSFET N-CH 200V 18A TO220AB |
|
NVMFS5C456NLWFAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 22A/87A 5DFN |
|
SFT1450-TL-HRochester Electronics |
MOSFET N-CH 40V 21A TP-FA |
|
NTD4857NA-1GRochester Electronics |
MOSFET N-CH 25V 12A/78A IPAK |
|
FQA7N80CRochester Electronics |
MOSFET N-CH 800V 7A TO3P |
|
SIHB12N50E-GE3Vishay / Siliconix |
MOSFET N-CH 500V 10.5A D2PAK |