MOSFET P-CH 20V 1.5A SOT323
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 150mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 320 pF @ 16 V |
FET Feature: | - |
Power Dissipation (Max): | 250mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TK35A08N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 80V 35A TO220SIS |
|
NP80N03MLE-S18-AYRochester Electronics |
MOSFET N-CH 30V 80A TO220 |
|
STE40NC60STMicroelectronics |
MOSFET N-CH 600V 40A ISOTOP |
|
SIHH080N60E-T1-GE3Vishay / Siliconix |
E SERIES POWER MOSFET POWERPAK 8 |
|
IPP80N06S4L05AKSA1Rochester Electronics |
MOSFET N-CH 60V 80A TO220-3 |
|
SQD70140EL_GE3Vishay / Siliconix |
MOSFET N-CH 100V 30A TO252AA |
|
BSL372SNH6327XTSA1Rochester Electronics |
MOSFET N-CH 100V 2A TSOP6-6 |
|
IPI80N06S207AKSA2Rochester Electronics |
MOSFET N-CH 55V 80A TO262-3-1 |
|
DMP6110SSDQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CHANNEL 60V 7.8A 8SO |
|
NTTFS4800NTAGRochester Electronics |
MOSFET N-CH 30V 5A/32A 8WDFN |
|
MSJP20N65-BPMicro Commercial Components (MCC) |
MOSFET N-CH TO220AB |
|
TSM4NB60CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 4A TO252 |
|
SISS06DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 47.6/172.6A PPAK |