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IRF620

IRF620

5.0A 200V 0.800 OHM N-CHANNEL

IRF620

IRF620

Image is for reference, please contact us to get the real picture

Part No :

IRF620

Manufacturer
Rochester Electronics
Description
5.0A 200V 0.800 OHM N-CHANNEL
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13485 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 19 - Dec 23 2024
PDF
IRF620 PDF
Type Description
Series:PowerMESH™ II
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:800mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:-
Power Dissipation (Max):70W (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
IRF620 is available at GangBo-ic.com, Please review product page below for detailed information, including IRF620 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF620 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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