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IRLB4030PBF

IRLB4030PBF

MOSFET N-CH 100V 180A TO220AB

IRLB4030PBF

IRLB4030PBF

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Part No :

IRLB4030PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 180A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16306 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 23 - Feb 27 2025
PDF
IRLB4030PBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.3mOhm @ 110A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:130 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:11360 pF @ 50 V
FET Feature:-
Power Dissipation (Max):370W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
IRLB4030PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRLB4030PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRLB4030PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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