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IPB054N06N3GATMA1

IPB054N06N3GATMA1

MOSFET N-CH 60V 80A D2PAK

126980

126980

B302 10X7 BLK/YEL CAUTION OSHA

IPB054N06N3GATMA1

IPB054N06N3GATMA1

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Part No :

IPB054N06N3GATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 80A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11975 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 24 - Feb 28 2025
PDF
IPB054N06N3GATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 58µA
Gate Charge (Qg) (Max) @ Vgs:82 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6600 pF @ 30 V
FET Feature:-
Power Dissipation (Max):115W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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