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IPB65R125C7ATMA1

IPB65R125C7ATMA1

PFET, 18A I(D), 650V, 0.125OHM,

IPB65R125C7ATMA1

IPB65R125C7ATMA1

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Part No :

IPB65R125C7ATMA1

Manufacturer
Rochester Electronics
Description
PFET, 18A I(D), 650V, 0.125OHM,
Catalog
Transistors - FETs, MOSFETs - Single
Availability
46278 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 23 - Sep 27 2024
PDF
IPB65R125C7ATMA1 PDF
Type Description
Series:CoolMOS™ C7
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id:4V @ 440µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.67 pF @ 400 V
FET Feature:-
Power Dissipation (Max):101W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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