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SIR188DP-T1-RE3

SIR188DP-T1-RE3

MOSFET N-CH 60V 25.5A/60A PPAK

SIR188DP-T1-RE3

SIR188DP-T1-RE3

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Part No :

SIR188DP-T1-RE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 60V 25.5A/60A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12875 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
SIR188DP-T1-RE3 PDF
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:25.5A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:3.85mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1920 pF @ 30 V
FET Feature:-
Power Dissipation (Max):5W (Ta), 65.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
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