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IPB80N03S4L03ATMA1

IPB80N03S4L03ATMA1

MOSFET N-CH 30V 80A TO263-3

62674-201121ALF

62674-201121ALF

CONN FFC VERT 20POS 0.50MM SMD

HSCMANV015PGAA5

HSCMANV015PGAA5

SENSOR PRES 15PSI GAUG 5V SMT

IPB80N03S4L03ATMA1

IPB80N03S4L03ATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPB80N03S4L03ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 80A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10496 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
IPB80N03S4L03ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2.2V @ 45µA
Gate Charge (Qg) (Max) @ Vgs:75 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:5100 pF @ 25 V
FET Feature:-
Power Dissipation (Max):94W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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