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SI7858ADP-T1-GE3

SI7858ADP-T1-GE3

MOSFET N-CH 12V 20A PPAK SO-8

358C1485B5C3T

358C1485B5C3T

XTAL OSC VCXO 148.5000MHZ HCMOS

SI7858ADP-T1-GE3

SI7858ADP-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SI7858ADP-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 12V 20A PPAK SO-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17735 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
SI7858ADP-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:2.6mOhm @ 29A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:5700 pF @ 6 V
FET Feature:-
Power Dissipation (Max):1.9W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
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