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IPI120N04S401AKSA1

IPI120N04S401AKSA1

MOSFET N-CH 40V 120A TO262-3

IPI120N04S401AKSA1

IPI120N04S401AKSA1

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Part No :

IPI120N04S401AKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 40V 120A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
IPI120N04S401AKSA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs:176 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:14 pF @ 25 V
FET Feature:-
Power Dissipation (Max):188W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IPI120N04S401AKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPI120N04S401AKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPI120N04S401AKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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