MOSFET N-CH 100V 7A 8DFN
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 17.6mOhm @ 20.4A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 55.8 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3990 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 3.1W (Ta), 77W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN (5x6) |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
FDB14N30TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 300V 14A D2PAK |
![]() |
RRR030P03TLROHM Semiconductor |
MOSFET P-CH 30V 3A TSMT3 |
![]() |
SQJ479EP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 80V 32A PPAK SO-8 |
![]() |
TK10S04K3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 10A DPAK |
![]() |
IRFD210PBFVishay / Siliconix |
MOSFET N-CH 200V 600MA 4DIP |
![]() |
NTD95N02RGRochester Electronics |
MOSFET N-CH 24V 12A/32A DPAK |
![]() |
C3M0280090J-TRWolfspeed - a Cree company |
SICFET N-CH 900V 11A D2PAK-7 |
![]() |
SI3467DV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 3.8A 6TSOP |
![]() |
IPD90N06S405ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO252-31 |
![]() |
SPD50N03S2L-06GRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
SI7386DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 12A PPAK SO-8 |
![]() |
APT75F50B2Roving Networks / Microchip Technology |
MOSFET N-CH 500V 75A T-MAX |
![]() |
SSM3K7002CFU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 170MA USM |