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FCB110N65F

FCB110N65F

MOSFET N-CH 650V 35A D2PAK

FCB110N65F

FCB110N65F

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Part No :

FCB110N65F

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 650V 35A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11017 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
FCB110N65F PDF
Type Description
Series:FRFET®, SuperFET® II
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id:5V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs:145 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4895 pF @ 100 V
FET Feature:-
Power Dissipation (Max):357W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FCB110N65F is available at GangBo-ic.com, Please review product page below for detailed information, including FCB110N65F price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FCB110N65F to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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