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FDB28N30TM

FDB28N30TM

MOSFET N-CH 300V 28A D2PAK

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FDB28N30TM

FDB28N30TM

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Part No :

FDB28N30TM

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 300V 28A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
302630 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
FDB28N30TM PDF
Type Description
Series:UniFET™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:129mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2250 pF @ 25 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FDB28N30TM is available at GangBo-ic.com, Please review product page below for detailed information, including FDB28N30TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDB28N30TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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