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IPB025N10N3GE8187ATMA1

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MOSFET N-CH 100V 180A TO263-7

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IPB025N10N3GE8187ATMA1

IPB025N10N3GE8187ATMA1

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Part No :

IPB025N10N3GE8187ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 180A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
172517 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IPB025N10N3GE8187ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.5V @ 275µA
Gate Charge (Qg) (Max) @ Vgs:206 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:14800 pF @ 50 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
IPB025N10N3GE8187ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB025N10N3GE8187ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB025N10N3GE8187ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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