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FQB19N10LTM

FQB19N10LTM

MOSFET N-CH 100V 19A D2PAK

FQB19N10LTM

FQB19N10LTM

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Part No :

FQB19N10LTM

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 19A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15002 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
FQB19N10LTM PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:100mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:870 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.75W (Ta), 75W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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