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CSD23202W10T

CSD23202W10T

MOSFET P-CH 12V 2.2A 4DSBGA

95368.4

95368.4

M25X1.5 CORD GRIP PVDF/TPE

CSD23202W10T

CSD23202W10T

Image is for reference, please contact us to get the real picture

Part No :

CSD23202W10T

Manufacturer
Texas Instruments
Description
MOSFET P-CH 12V 2.2A 4DSBGA
Catalog
Transistors - FETs, MOSFETs - Single
Availability
18785 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 23 - Feb 27 2025
Type Description
Series:NexFET™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:53mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.8 nC @ 4.5 V
Vgs (Max):-6V
Input Capacitance (Ciss) (Max) @ Vds:512 pF @ 6 V
FET Feature:-
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-DSBGA (1x1)
Package / Case:4-UFBGA, DSBGA
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