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BSS806NEH6327XTSA1

BSS806NEH6327XTSA1

MOSFET N-CH 20V 2.3A SOT23-3

BSS806NEH6327XTSA1

BSS806NEH6327XTSA1

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Part No :

BSS806NEH6327XTSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 20V 2.3A SOT23-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19894 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 21 - Feb 25 2025
PDF
BSS806NEH6327XTSA1 PDF
Type Description
Series:Automotive, AEC-Q101, HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 2.5V
Rds On (Max) @ Id, Vgs:57mOhm @ 2.3A, 2.5V
Vgs(th) (Max) @ Id:0.75V @ 11µA
Gate Charge (Qg) (Max) @ Vgs:1.7 nC @ 2.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:529 pF @ 10 V
FET Feature:-
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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