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R6008ANX

R6008ANX

MOSFET N-CH 600V 8A TO-220FM

R6008ANX

R6008ANX

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Part No :

R6008ANX

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 600V 8A TO-220FM
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11234 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 22 - Feb 26 2025
PDF
R6008ANX PDF
Type Description
Series:*
Package:BulkBulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:800mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:680 pF @ 25 V
FET Feature:-
Power Dissipation (Max):50W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FM
Package / Case:TO-220-3 Full Pack
R6008ANX is available at GangBo-ic.com, Please review product page below for detailed information, including R6008ANX price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for R6008ANX to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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