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BSC027N10NS5ATMA1

BSC027N10NS5ATMA1

Image is for reference, please contact us to get the real picture

Part No :

BSC027N10NS5ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 23A/100A TSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14046 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 02 - Dec 06 2024
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:23A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.8V @ 146µA
Gate Charge (Qg) (Max) @ Vgs:111 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8200 pF @ 50 V
FET Feature:-
Power Dissipation (Max):3W (Ta), 214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSON-8-3
Package / Case:8-PowerTDFN
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