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IRF8113GPBF

IRF8113GPBF

MOSFET N-CH 30V 17.2A 8SO

IRF8113GPBF

IRF8113GPBF

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Part No :

IRF8113GPBF

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 17.2A 8SO
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10950 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 10 - Jan 14 2025
PDF
IRF8113GPBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:17.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.6mOhm @ 17.2A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2.91 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
IRF8113GPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF8113GPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF8113GPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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