MOSFET N-CH 600V 13A TO220
Type | Description |
---|---|
Series: | FDmesh™ II |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 290mOhm @ 6.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 34 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 1030 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 110W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
2N6792Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDZ1827NZRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
AUIRLU3114Z-701TRLRochester Electronics |
AUTOMOTIVE HEXFET N-CHANNEL |
|
PSMN3R2-30YLC,115Rochester Electronics |
ELEMENT, NCHANNEL, SILICON, MOSF |
|
TJ10S04M3L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 10A DPAK |
|
IRF9630PBF-BE3Vishay / Siliconix |
MOSFET P-CH 200V 6.5A TO220AB |
|
IXTA1N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 1A TO263 |
|
2SK2570ZL-TL-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIHP186N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 18A TO220AB |
|
FK4B01100L1Panasonic |
MOSFET N-CH 12V 3.4A XLGA004 |
|
SI7465DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 60V 3.2A PPAK SO-8 |
|
IXTA10P15T-TRLWickmann / Littelfuse |
MOSFET P-CH 150V 10A TO263 |
|
NP22N055HLE-AYRochester Electronics |
N-CHANNEL POWER MOSFET |