MOSFET N-CH 30V 50A TO220-3
Type | Description |
---|---|
Series: | OptiMOS™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5.5mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 31 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3200 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 68W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220-3 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SQ4470EY-T1_BE3Vishay / Siliconix |
MOSFET N-CH 60V 16A 8SOIC |
|
PSMN2R0-60PS,127Nexperia |
MOSFET N-CH 60V 120A TO220AB |
|
FQPF8N90CRochester Electronics |
MOSFET N-CH 900V 6.3A TO220F |
|
FQU3N40TURochester Electronics |
MOSFET N-CH 400V 2A IPAK |
|
STI24NM60NSTMicroelectronics |
MOSFET N CH 600V 17A I2PAK |
|
RD3P200SNTL1ROHM Semiconductor |
MOSFET N-CH 100V 20A TO252 |
|
EPC2059EPC |
TRANS GAN 170V DIE .009OHM |
|
ZVN4424GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 240V 500MA SOT223 |
|
NTD110N02R-001Rochester Electronics |
MOSFET N-CH 24V 12.5A/110A IPAK |
|
STL7N80K5STMicroelectronics |
MOSFET N-CH 800V 3.6A POWERFLAT |
|
STF4N90K5STMicroelectronics |
MOSFET N-CH 900V 4A TO220FP |
|
NVTFS4C06NWFTWGRochester Electronics |
MOSFET N-CH 30V 21A 8WDFN |
|
SPW17N80C3FKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 17A TO247-3 |