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VP2206N3-G

VP2206N3-G

MOSFET P-CH 60V 640MA TO92-3

VP2206N3-G

VP2206N3-G

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Part No :

VP2206N3-G

Manufacturer
Roving Networks / Microchip Technology
Description
MOSFET P-CH 60V 640MA TO92-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10640 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 01 - Dec 05 2024
PDF
VP2206N3-G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:640mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:900mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 25 V
FET Feature:-
Power Dissipation (Max):740mW (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92-3
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
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